Description
WS₂ FET Device
Specifications:
Packaging: Single device (1 unit per package)
Device Dimensions: 1 cm × 1 cm
Substrate: SiO₂/Si (Silicon with 300 nm SiO₂ layer)
Device Structure:
SiO₂/Si Substrate / WS₂ Channel / Au or Cr+Au Electrodes
Device Description & Features:
High-Performance 2D Semiconductor: Tungsten disulfide (WS₂) is a layered transition metal dichalcogenide (TMD) with a direct bandgap (~2.0 eV in monolayer form) and an indirect bandgap in multilayer form, making it ideal for high-performance electronic and optoelectronic applications.
Back-Gated FET Configuration: The SiO₂/Si substrate serves as a global back-gate, enabling efficient electrostatic control over the WS₂ channel.
Stable n-Type or Ambipolar Conductivity: WS₂ exhibits high electron mobility and can demonstrate ambipolar transport under certain gating conditions.
Mechanically Exfoliated or CVD-Grown WS₂: Ensures high crystal quality, minimal defects, and superior charge transport.
Ohmic Contact Engineering: Au or Cr+Au electrodes provide low-resistance metal contacts, optimizing carrier injection.
Applications:
High-Performance Field-Effect Transistors (FETs):
WS₂ FETs exhibit high electron mobility, strong gate tunability, and a high on/off ratio, making them suitable for next-generation nanoelectronics.
Flexible and Transparent Electronics:
Ideal for wearable electronics, transparent circuits, and flexible transistors due to WS₂’s mechanical flexibility and optical transparency.
Optoelectronic & Photodetector Applications:
The direct bandgap of monolayer WS₂ makes it ideal for photodetectors, LEDs, and photovoltaic applications.
Spintronics & Quantum Transport:
The strong spin-orbit coupling in WS₂ enables potential applications in spintronic and quantum devices.
Additional information
| CAS Number | N/A |
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