Description
W-Doped MoSe₂ Crystals (Tungsten-Doped Molybdenum Diselenide)
W-doped MoSe₂ is a layered transition metal dichalcogenide (TMDC) with a van der Waals structure. Tungsten doping modifies the electronic band structure, enhances charge carrier mobility, and introduces unique optical and catalytic properties, making it an excellent material for optoelectronics, energy storage, and quantum material studies.
Sample Size Options:
Crystals larger than 10 mm²
Crystals larger than 25 mm²
Crystals larger than 100 mm²
Material Properties:
Layered Van der Waals Structure: Facilitates exfoliation into thin layers for 2D research and applications.
Bandgap Engineering: Tungsten doping allows for fine-tuning of the bandgap and electronic properties.
High Charge Carrier Mobility: Enhanced electronic transport suitable for advanced optoelectronic devices.
Optical Absorption: Strong absorption in the visible-to-infrared spectrum for photonic applications.
Crystal Structure:
Type: Hexagonal layered structure
Features: Cleavable layers, ideal for thin-film fabrication and nanoscale device research.
Degree of Exfoliation:
Ease of Use: Readily exfoliates into monolayers or few-layer sheets for advanced studies and integration.
Other Characteristics:
Quantum Material Potential: Suitable for exploring quantum transport and doping-induced effects in TMDCs.
Energy Applications: Enhanced catalytic activity for hydrogen evolution reactions (HER) and other catalytic processes.
Tunable Optical Properties: Ideal for photodetectors, LEDs, and photovoltaic devices.
Applications:
Optoelectronics:
Ideal for photodetectors, light-emitting diodes, and high-performance photovoltaic devices.
Quantum Materials Research:
Enables exploration of doping-induced quantum effects and electronic transport phenomena.
Energy Applications:
Promising for hydrogen evolution reactions (HER), catalytic processes, and energy conversion technologies.
2D Material Studies:
Perfect for integration into van der Waals heterostructures and thin-film devices.
Spintronics:
Suitable for spin-based devices and exploring spin-orbit interactions in doped TMDCs.
Additional information
| CAS Number | N/A |
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