Description
Tungsten Diselenide (WSe₂)
CAS Number: 12067-46-8
Substrate Size: 4-Inch Sapphire Wafer
Preparation Method: Chemical Vapor Deposition (CVD)
Substrate Options:
WSe₂ films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request—please visit our Custom Products page or contact us for assistance.
Fundamental Properties:
Tungsten diselenide (WSe₂) is a two-dimensional transition metal dichalcogenide (TMD) characterized by its layered structure and strong in-plane covalent bonding. In its monolayer form, WSe₂ exhibits a direct bandgap of approximately 1.65 eV, making it highly suitable for light-harvesting and emission applications. In bulk form, WSe₂ has an indirect bandgap of about 1.2 eV. The bandgap energy decreases as the number of layers increases, transitioning from direct to indirect.
WSe₂ demonstrates unique spin-valley coupling effects and strong photoluminescence, enabling its use in next-generation optoelectronics and quantum technologies. Its excellent environmental stability and high carrier mobility further enhance its applicability in advanced electronic and optoelectronic devices.
Applications:
Optoelectronics: WSe₂ is widely used in photodetectors, solar cells, and light-emitting devices due to its direct bandgap and strong light-matter interaction in the monolayer form.
Microelectronics: Its high carrier mobility and excellent on/off ratios make WSe₂ an ideal material for field-effect transistors (FETs).
Quantum Technologies: The spin-valley coupling properties of WSe₂ enable its application in quantum computing and valleytronic devices.
Energy Applications: WSe₂ is explored as a material for hydrogen evolution reactions (HER) and other catalytic processes due to its tunable electronic properties.
Sensors: WSe₂-based sensors exhibit high sensitivity and selectivity for detecting gases, chemicals, and biomolecules.
Additional information
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