Description
Tin Disulfide (SnS₂)
CAS Number: 1315-01-1
Substrate Size: 1 cm × 1 cm
Preparation Method: Chemical Vapor Deposition (CVD)
Substrate Options:
SnS₂ films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request—please visit our Custom Products page or contact us for assistance.
Fundamental Properties:
Tin sulfide (SnS₂) is a layered transition metal dichalcogenide (TMD) with a hexagonal crystal structure. It exhibits semiconducting behavior with an indirect bandgap of approximately 2.1 eV in its bulk form, while monolayers display a direct bandgap, making SnS₂ suitable for optoelectronic and photovoltaic applications.
SnS₂ is known for its high environmental stability, low-cost fabrication, and abundance, which make it a sustainable choice for advanced materials. Its layered structure enables easy exfoliation and integration into nanoscale devices, and its excellent photoresponse makes it attractive for sensing and light-harvesting technologies.
Applications:
Optoelectronics: The direct bandgap of monolayer SnS₂ makes it suitable for photodetectors, solar cells, and LEDs.
Electronics: SnS₂ is a promising material for thin-film transistors (TFTs) due to its semiconducting properties and mechanical flexibility.
Sensors: SnS₂-based devices offer high sensitivity and selectivity for gas and chemical sensing.
Energy Applications: SnS₂ is used as a photocatalyst for water splitting and as an electrode material for batteries and supercapacitors.
Catalysis: Its layered structure and chemical properties make SnS₂ a potential catalyst for various chemical reactions.
Additional information
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