Description
Tin Diselenide (SnSe₂)
CAS Number: 20770-09-6
Substrate Size: 1 cm × 1 cm
Preparation Method: Chemical Vapor Deposition (CVD)
Substrate Options:
SnSe₂ films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request—please visit our Custom Products page or contact us for assistance.
Fundamental Properties:
Tin diselenide (SnSe₂) is a layered transition metal dichalcogenide (TMD) with a hexagonal crystal structure. It is a semiconducting material with an indirect bandgap of approximately 1.2 eV in its bulk form and a direct bandgap in monolayer form. SnSe₂ is known for its excellent electrical, optical, and thermal properties, as well as its environmental stability and ease of exfoliation.
SnSe₂’s unique electronic structure and photoresponse make it highly suitable for optoelectronic devices, while its chemical and thermal stability support applications in energy storage and sensing technologies.
Applications:
Optoelectronics: SnSe₂’s direct bandgap in monolayer form makes it ideal for photodetectors, solar cells, and light-emitting diodes (LEDs).
Electronics: Its semiconducting properties and high mobility enable applications in thin-film transistors (TFTs) and other electronic devices.
Sensors: SnSe₂-based sensors offer high sensitivity for detecting gases, chemicals, and environmental changes.
Energy Applications: SnSe₂ is used as a photocatalyst for water splitting and as an electrode material in batteries and supercapacitors.
Catalysis: SnSe₂ exhibits potential for catalytic reactions due to its chemical properties and layered structure.
Additional information
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