Description
SnBi₂Te₄ Crystals (Tin Bismuth Telluride)
SnBi₂Te₄ is a layered topological insulator with a van der Waals structure, combining unique thermoelectric and electronic properties. Its robust surface states, high thermoelectric performance, and anisotropic characteristics make it a promising material for quantum materials research, energy harvesting, and advanced spintronic applications. Our SnBi₂Te₄ crystals are synthesized using the Chemical Vapor Transport (CVT) method, ensuring high purity, precise stoichiometry, and exceptional crystallinity.
Sample Size Options:
Crystals larger than 10 mm²
Crystals larger than 25 mm²
Material Properties:
Layered Van der Waals Structure: Facilitates exfoliation into thin layers for 2D material studies.
Topological Insulator Behavior: Exhibits robust surface states protected by time-reversal symmetry.
Thermoelectric Efficiency: High Seebeck coefficient and low thermal conductivity for energy conversion.
Electronic Conductivity: Excellent carrier mobility suitable for electronic applications.
Crystal Structure:
Type: Rhombohedral layered structure
Features: Cleavable layers ideal for thin-film fabrication and nanoscale research.
Degree of Exfoliation:
Ease of Use: Readily exfoliates into monolayers or few-layer sheets for advanced research.
Other Characteristics:
Quantum Phenomena: Suitable for studying topological surface states and quantum transport properties.
Thermoelectric Properties: Promising for energy harvesting and cooling applications.
Spintronics Applications: Ideal for exploring spin-momentum locking and spintronic devices.
Applications:
Quantum Materials Research:
Enables studies of topological insulators and low-dimensional electronic properties.
Thermoelectric Devices:
Suitable for power generation and thermal management applications.
Spintronics:
Promising for spin-based devices and investigating spin-orbit coupling.
2D Material Studies:
Ideal for exfoliation into thin layers and integration with van der Waals heterostructures.
Optoelectronics:
Suitable for photonic and optoelectronic device applications.
Additional information
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