Description
Sb₂TeSe₂ Crystals (Antimony Telluride Selenide)
Sb₂TeSe₂ is a layered topological insulator with a van der Waals structure, offering exceptional electronic, optical, and thermoelectric properties. Its robust surface states, high carrier mobility, and tunable electronic properties make it a promising material for quantum materials research, spintronics, and advanced thermoelectric applications. Our Sb₂TeSe₂ crystals are synthesized using the Chemical Vapor Transport (CVT) method to ensure high purity, precise stoichiometry, and exceptional crystallinity.
Sample Size Options:
Crystals larger than 10 mm²
Crystals larger than 25 mm²
Material Properties:
Layered Van der Waals Structure: Enables exfoliation into thin layers for 2D material studies.
Topological Insulator Behavior: Exhibits robust surface states protected by time-reversal symmetry.
Thermoelectric Efficiency: High Seebeck coefficient and low thermal conductivity for energy conversion.
Optical Absorption: Strong absorption in the visible-to-infrared range.
Crystal Structure:
Type: Rhombohedral layered structure
Features: Cleavable layers, suitable for thin-film fabrication and nanoscale research.
Degree of Exfoliation:
Ease of Use: Readily exfoliates into monolayers or few-layer sheets for advanced research.
Other Characteristics:
Quantum Phenomena: Ideal for studying topological surface states and quantum transport properties.
Thermoelectric Properties: Suitable for energy harvesting and thermal management.
Spintronics Applications: Promising for exploring spin-momentum locking and spintronic devices.
Applications:
Quantum Materials Research:
Enables studies of topological insulators and associated quantum effects.
Spintronics:
Suitable for spin-based devices and exploring spin-orbit coupling phenomena.
Thermoelectric Devices:
Promising material for energy harvesting and thermoelectric cooling applications.
2D Material Studies:
Ideal for exfoliation into thin layers and integration with van der Waals heterostructures.
Optoelectronics:
Suitable for photodetectors and other optoelectronic devices.
Additional information
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