Description
Rhenium Disulfide (ReS₂)
CAS Number: 12038-63-0
Substrate Size: 1 cm × 1 cm
Preparation Method: Chemical Vapor Deposition (CVD)
Substrate Options:
ReS₂ films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request—please visit our Custom Products page or contact us for assistance.
Fundamental Properties:
Rhenium disulfide (ReS₂) is a unique transition metal dichalcogenide (TMD) with a distorted 1T crystal structure, resulting in weak interlayer coupling. Unlike many TMDs, ReS₂ exhibits nearly layer-independent properties due to its in-plane anisotropy and lack of interlayer registry. This makes it highly suitable for applications where layer-dependent properties are critical.
Monolayer ReS₂ has an indirect bandgap of approximately 1.4 eV, and it retains semiconducting behavior across multiple layers. Its excellent mechanical flexibility, anisotropic optical properties, and environmental stability further enhance its suitability for advanced technologies.
Applications:
Optoelectronics: ReS₂’s layer-independent optical properties make it ideal for photodetectors and other optoelectronic devices.
Electronics: ReS₂ is used in field-effect transistors (FETs) due to its tunable electronic properties and high stability.
Sensors: The anisotropic nature of ReS₂ enhances its performance in gas and chemical sensing applications.
Energy Applications: ReS₂ has potential for catalytic applications, including hydrogen evolution reactions (HER), and as an electrode material in energy storage devices.
Photonics and Nonlinear Optics: The anisotropic optical response of ReS₂ enables its use in polarization-sensitive photonic devices.
Additional information
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