PbSe Crystals

Description

PbSe Crystals (Lead Selenide)

PbSe is a narrow bandgap semiconductor with exceptional thermoelectric, optical, and electronic properties. Its strong light absorption, tunable bandgap, and high carrier mobility make it a key material for applications in infrared optoelectronics, thermoelectric devices, and quantum materials research. Our PbSe crystals are synthesized using the Chemical Vapor Transport (CVT) method to ensure high purity, exceptional crystallinity, and reliable performance for advanced research.

Sample Size Options:
Crystals larger than 10 mm²
Crystals larger than 25 mm²

Material Properties:
Narrow Bandgap: ~0.2₇ eV at room temperature, suitable for infrared detection.
High Optical Absorption: Strong absorption in the infrared range, ideal for photonic applications.
Thermoelectric Efficiency: High Seebeck coefficient and low thermal conductivity.
Carrier Mobility: High electron mobility, enabling advanced electronic applications.

Crystal Structure:
Type: Cubic rock-salt structure
Features: Ideal for thin-film fabrication and nanoscale device studies.

Degree of Exfoliation:
Ease of Use: Can be fabricated into thin layers for advanced research and device integration.

Other Characteristics:
Infrared Detection: Exceptional performance in photodetectors and imaging systems.
Thermoelectric Properties: Suitable for power generation and cooling applications.
Environmental Stability: Stable under controlled conditions, sensitive to oxidation and moisture.

Applications:
Infrared Optoelectronics:
Ideal for infrared photodetectors, cameras, and sensors.
Thermoelectric Devices:
Suitable for thermoelectric power generation and refrigeration.
Quantum Materials Research:
Enables exploration of narrow bandgap semiconductors in quantum systems.
Energy Applications:
Promising for energy harvesting and thermal-to-electric conversion technologies.
Sensors:
High sensitivity for environmental and chemical detection.