Multilayer ReS₂/PdSe₂ FET Device

Description

Multilayer ReS₂/PdSe₂ FET Device

Device Structure:
Conductive Si Substrate / 285 nm SiO₂ / Au Electrodes / Exfoliated Multilayer PdSe₂ / Exfoliated Multilayer ReS₂

Material Specifications:
Multilayer PdSe₂
Multilayer ReS₂
For specific thickness requirements, please contact us.

Device Description & Features:
Heterostructure 2D FET: The combination of PdSe₂ and ReS₂ forms a unique type-II van der Waals heterojunction, enabling efficient charge transfer and enhanced carrier transport.
Layer-Dependent Bandgap Engineering:
ReS₂: Anisotropic direct bandgap (~1.35 eV in monolayer), tunable with layer thickness.
PdSe₂: Layer-dependent bandgap (from ~1.3 eV in few layers to metallic in bulk form), allowing enhanced electronic versatility.
Back-Gated Configuration: The SiO₂/Si back-gate structure provides effective electrostatic control, ensuring low-power operation and high field-effect mobility.
Mechanically Exfoliated 2D Layers: High-purity ReS₂ and PdSe₂ flakes retain intrinsic properties with minimal structural defects.
Gold Electrodes: Forms low-resistance Ohmic contacts, optimizing charge injection and carrier transport.

Applications:
High-Performance Field-Effect Transistors (FETs):
The heterostructure channel enables tunable electronic properties, suitable for next-generation nanoelectronics.
Anisotropic & Layer-Dependent Transport Studies:
The device allows exploration of anisotropic carrier transport and thickness-dependent bandgap variations.
Optoelectronic & Photodetector Applications:
The heterostructure band alignment enhances photocurrent generation, making it ideal for photodetectors and photovoltaic applications.
Neuromorphic & Quantum Computing:
The unique electronic structure of PdSe₂ and ReS₂ allows potential applications in neuromorphic devices and quantum information processing.