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MoVSe₄ Crystals

SKU MoVSe₄-1-1 Category

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£396.00

Description

MoVSe₄ Crystals (Molybdenum Vanadium Tetraselenide)

MoVSe₄ is a layered transition metal chalcogenide with a van der Waals structure. The incorporation of vanadium into the MoSe₂ framework introduces unique electronic, optical, and catalytic properties, including enhanced magnetic and electronic behavior. This makes MoVSe₄ an excellent material for spintronics, quantum research, and energy-related applications.

Sample Size Options:
Crystals larger than 10 mm²

Material Properties:
Layered Van der Waals Structure: Facilitates exfoliation into monolayers or few-layer sheets for 2D material research.
Magnetic and Electronic Tuning: Vanadium doping introduces localized magnetic moments and modifies the electronic band structure.
Enhanced Catalytic Activity: High efficiency in hydrogen evolution reactions (HER) and other electrocatalytic processes.
Tunable Optical Properties: Strong absorption and photoluminescence for optoelectronic devices.

Crystal Structure:
Type: Layered structure with van der Waals interactions
Features: Easily cleavable layers suitable for thin-film fabrication and nanoscale research.

Degree of Exfoliation:
Ease of Use: Readily exfoliates into thin layers for advanced material studies and applications.

Other Characteristics:
Quantum Research Potential: Enables exploration of doping-induced magnetic and quantum transport phenomena.
Energy Applications: High catalytic activity for energy conversion technologies.
Optoelectronic Potential: Suitable for advanced photonic and optoelectronic applications.

Applications:
Spintronics:
Promising for spin-based devices and studying magnetic properties in doped TMDCs.
Quantum Materials Research:
Ideal for investigating quantum transport phenomena and electronic behavior.
Optoelectronics:
Suitable for photodetectors, light-emitting devices, and photovoltaic applications.
Energy Applications:
High catalytic performance for HER and other energy-related processes.
2D Material Studies:
Perfect for integration into van der Waals heterostructures and thin-film devices.

Additional information

CAS Number

N/A