MoTe₂ Crystals

Description

MoTe₂ Crystals (2H Phase, Molybdenum Ditelluride)

MoTe₂ is a layered transition metal dichalcogenide (TMDC) with a van der Waals structure, known for its semiconducting 2H phase. With a tunable bandgap and excellent electronic and optical properties, MoTe₂ is a promising material for optoelectronics, photonics, and 2D material research.

Sample Size Options:
Crystals larger than 10 mm²
Crystals larger than 25 mm²

Material Properties:
Layered Van der Waals Structure: Ideal for exfoliation into thin layers.
Semiconducting 2H Phase: Exhibits a direct bandgap (~1.1 eV for monolayers, indirect in bulk).
High Carrier Mobility: Suitable for advanced electronic applications.
Thermal Stability: Maintains structural and electronic properties under controlled conditions.

Crystal Structure:
Type: Hexagonal (2H phase)
Features: Cleavable layers for 2D research and device fabrication.

Degree of Exfoliation:
Ease of Use: Easily exfoliated into monolayers or few-layer sheets for advanced 2D applications.

Other Characteristics:
Tunable Bandgap: Transition from indirect (bulk) to direct (monolayer) bandgap, ideal for optoelectronics.
Optical Properties: High quantum efficiency and strong light absorption in the near-infrared range.
Chemical Stability: Stable under inert storage conditions for long-term use.

Applications:
Optoelectronics:
Ideal for photodetectors, light-emitting devices, and other optoelectronic applications.
2D Material Studies:
Suitable for exfoliation into monolayers and exploring heterostructures in van der Waals systems.
Quantum Materials Research:
Enables studies of low-dimensional electronic and optical properties.
Energy Applications:
Promising material for photocatalysis, hydrogen evolution reactions (HER), and solar energy conversion.

References:
1， Qu, Deshun, et al. “Carrier‐type modulation and mobility improvement of thin MoTe2.” Advanced Materials 29.39 (2017): 1606433.
2，Song, Seunghyun, et al. “Room temperature semiconductor–metal transition of MoTe2 thin films engineered by strain.” Nano letters 16.1 (2016): 188-193.
3，Zhang, Kenan, et al. “Interlayer transition and infrared photodetection in atomically thin type-II MoTe2/MoS2 van der Waals heterostructures.” ACS nano 10.3 (2016): 3852-3858.
4，Octon, Tobias J., et al. “Fast High‐Responsivity Few‐Layer MoTe2 Photodetectors.” Advanced Optical Materials 4.11 (2016): 1750-1754.