MoSSe Crystals

Description

MoSSe Crystals (Molybdenum Sulfur Selenide)

MoSSe is a Janus-type layered transition metal dichalcogenide (TMD) with asymmetric sulfur and selenium layers, leading to unique physical and chemical properties. Its broken out-of-plane symmetry results in a built-in dipole moment, enhancing piezoelectric, optoelectronic, and catalytic performance. MoSSe is widely studied for applications in 2D materials, quantum devices, and energy conversion technologies. Our MoSSe crystals are synthesized using the Chemical Vapor Transport (CVT) method, ensuring high purity, precise stoichiometry, and exceptional crystallinity.

Sample Size Options:
Crystals larger than 10 mm²
Crystals larger than 25 mm²
Crystals larger than 100 mm²

Material Properties:
Janus Structure (Asymmetric Mo-S/Se Layers): Results in a built-in dipole moment, enabling strong piezoelectric and ferroelectric effects.
Tunable Bandgap: Direct-to-indirect bandgap transition depending on thickness, with bandgaps ranging from ~1.5 eV to ~1.8 eV.
High Carrier Mobility: Suitable for high-speed electronic and optoelectronic devices.
Strong Spin-Orbit Coupling: Facilitates spintronic applications and valleytronics research.
Enhanced Catalytic Activity: High surface reactivity for electrocatalysis, particularly in hydrogen evolution reactions (HER).

Crystal Structure:
Type: Hexagonal layered structure with Janus symmetry
Features: Cleavable layers ideal for thin-film fabrication and nanoscale device applications.

Degree of Exfoliation:
Ease of Use: Easily exfoliated into monolayers or few-layer nanosheets for 2D materials research and device integration.

Other Characteristics:
Piezoelectric and Ferroelectric Effects: Due to out-of-plane dipole asymmetry, making it suitable for nanoscale sensors and actuators.
High Optical Absorption: Ideal for optoelectronic applications, including photodetectors and solar cells.
Quantum Confinement Effects: Exhibits unique quantum properties when thinned down to monolayer structures.

Applications:
Optoelectronics:
Ideal for photodetectors, light-emitting diodes (LEDs), and solar cells due to strong light-matter interaction.
Spintronics & Valleytronics:
Suitable for spin-based devices and valleytronic applications due to strong spin-orbit coupling.
Energy Conversion:
High catalytic activity for hydrogen evolution reactions (HER) and other electrocatalytic applications.
2D Material Studies:
Perfect for exfoliation into monolayers and integration into van der Waals heterostructures.
Sensors:
High sensitivity for gas, chemical, and strain sensing due to asymmetric structure and surface activity.

Synthesis Method:
Chemical Vapor Transport (CVT): Ensures high-quality crystals with excellent purity, uniformity, and structural integrity.