Description
Molybdenum Disulfide (MoS₂)
CAS Number: 1317-33-5
Substrate Size: 4-Inch Sapphire Wafer
Preparation Method: Chemical Vapor Deposition (CVD)
Substrate Options:
Monolayer or few-layer MoS₂ films are directly grown on 4-inch sapphire wafers. Custom transfer to other substrates is available upon request—please visit our Custom Products page or contact us for assistance.
Fundamental Properties:
Undoped molybdenum disulfide (MoS₂) is a layered n-type semiconductor belonging to the family of transition metal dichalcogenides. In its monolayer form, MoS₂ has a direct bandgap of approximately 1.85 eV, making it highly suitable for optoelectronic applications. In bulk form, MoS₂ exhibits an indirect bandgap of 1.23 eV. The bandgap of multilayer MoS₂ lies between these two values, gradually transitioning from direct to indirect as the number of layers increases.
Applications:
MoS₂ thin films are widely applied in various fields, including optoelectronic devices, microelectronics, biosensors, and chemical sensors, due to their unique electronic and optical properties.
References:
1. Gao, M.-R., Liang, J.-X., Zheng, Y.-R., Xu, Y.-F., Jiang, J., Gao, Q., Li, J., & Yu, S.-H. (2015). An efficient molybdenum disulfide/cobalt diselenide hybrid catalyst for electrochemical hydrogen generation. Nature Communications, 6, 5982. https://doi.org/10.1038/ncomms6982
2. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, I. V., & Kis, A. (2011). Single-layer MoS₂ transistors. Nature Nanotechnology, 6(3), 147–150. https://doi.org/10.1038/nnano.2010.279
3. Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012). Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nature Nanotechnology, 7(11), 699–712. https://doi.org/10.1038/nnano.2012.193
Additional information
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