Description
Molybdenum Diselenide (MoSe₂)
CAS Number: 12058-18-3
Substrate Size: 1 cm × 1 cm
Preparation Method: Chemical Vapor Deposition (CVD)
Substrate Options:
MoSe₂ films, in either monolayer or few-layer forms, are directly grown on sapphire wafers. Custom transfer to other substrates is available—please visit our Custom Products page or contact us directly for further assistance.
Fundamental Properties:
Molybdenum diselenide (MoSe₂) is a transition metal dichalcogenide with a layered structure and strong in-plane covalent bonding, making it mechanically and chemically robust. In its monolayer form, MoSe₂ exhibits a direct bandgap of approximately 1.55 eV, enabling efficient absorption and emission of light, which is critical for optoelectronic devices. Multilayer and bulk MoSe₂, however, have an indirect bandgap of about 1.1 eV. The electronic structure of MoSe₂ allows for layer-dependent tunability, making it a promising material for flexible electronics and photonics.
MoSe₂ also demonstrates strong spin-orbit coupling and valley polarization, which are advantageous for spintronic and valleytronic applications. Its high carrier mobility and environmental stability further enhance its versatility.
Applications:
MoSe₂ thin films are used in a broad range of applications, including:
Optoelectronics: Monolayer MoSe₂ is ideal for light-emitting diodes, photodetectors, and solar cells due to its direct bandgap and excellent light-matter interaction.
Microelectronics: Thin layers of MoSe₂ serve as channel materials in field-effect transistors (FETs) with excellent on/off ratios and carrier mobility.
Energy Storage and Catalysis: MoSe₂ has demonstrated promise as an active material for hydrogen evolution reactions (HER) and as an electrode in lithium-ion batteries.
Quantum Technologies: Its valleytronic properties enable applications in next-generation quantum computing and communication systems.
Additional information
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