Description
Mechanically Exfoliated ReS₂ FET (Back-Gated ReS₂ FET)
Device Structure:
Au Electrodes / ReS₂ / 300 nm SiO₂ / Si Back-Gated FET
Device Specifications:
Channel Width: 5 µm
Few-layer (~5 layers)
Multilayer (~10 layers)
For specific thickness requirements, please contact us.
Device Description & Features:
Anisotropic 2D Semiconductor: Rhenium disulfide (ReS₂) is a layered transition metal dichalcogenide (TMD) with a low-symmetry triclinic crystal structure, leading to strong in-plane anisotropic transport properties.
Layer-Dependent Bandgap: Few-layer ReS₂ has a tunable direct bandgap (~1.35 eV in monolayer form), making it suitable for high-performance optoelectronic applications.
Back-Gated FET Configuration: The SiO₂/Si back-gate structure ensures efficient electrostatic control, allowing for low-power operation and a high on/off ratio.
Mechanically Exfoliated Layers: Produces high-quality, intrinsic ReS₂ films with minimal defects and superior carrier mobility.
Gold Electrodes: Forms low-resistance Ohmic contacts, enhancing charge injection efficiency.
Applications:
High-Performance Field-Effect Transistors (FETs):
Exhibits anisotropic electronic transport, enabling directionally tunable nanoelectronics.
Flexible & Low-Power Electronics:
Ideal for wearable and flexible transistors, benefiting from ReS₂’s mechanical flexibility.
Optoelectronic & Photonic Devices:
Strong light absorption and direct bandgap make it suitable for photodetectors, light emitters, and photovoltaic applications.
Quantum Transport & Spintronics:
Unique layered structure and strong spin-orbit coupling allow applications in quantum computing and spintronic devices.
Additional information
| CAS Number | N/A |
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