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In₂Se₃ Crystals (α-₂H Phase)

SKU In₂Se₃-1-1 Category

Additional information

CAS Number

1205₆-0₇-4

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Description

In₂Se₃ Crystals (Indium Selenide, α-2H Phase)

In₂Se₃ is a layered semiconductor with a van der Waals structure, widely known for its tunable electronic properties, phase-dependent behavior, and ferroelectric characteristics. The α-2H phase of In₂Se₃ exhibits excellent optical and electrical properties, making it ideal for applications in optoelectronics, memory devices, and 2D material studies. Our In₂Se₃ crystals are synthesized using the Chemical Vapor Transport (CVT) method, ensuring high purity, precise stoichiometry, and superior crystallinity.

Sample Size Options:
Crystals larger than 10 mm²
Crystals larger than 25 mm²
Crystals larger than 100 mm²

Material Properties:
Phase: α-2H phase with stable layered structure.
Layered Van der Waals Structure: Enables easy exfoliation into monolayers or few-layer sheets.
Tunable Bandgap: Varies with thickness, suitable for electronic and optoelectronic devices.
Ferroelectric Properties: Exhibits out-of-plane polarization, making it promising for memory applications.
High Optical Absorption: Strong light absorption in the visible and near-infrared ranges.

Crystal Structure:
Type: Hexagonal α-2H phase layered structure
Features: Cleavable layers ideal for thin-film fabrication and nanoscale research.

Degree of Exfoliation:
Ease of Use: Easily exfoliated into monolayers or few-layer nanosheets for 2D materials research and device integration.

Other Characteristics:
Ferroelectric Behavior: Suitable for non-volatile memory devices due to its switchable polarization.
Optoelectronic Performance: High photoconductivity and optical response for advanced optoelectronic applications.
Thermal Stability: Stable under ambient conditions and suitable for device fabrication.

Applications:
Optoelectronics:
Ideal for photodetectors, light-emitting diodes (LEDs), and photovoltaic devices.
Ferroelectric Memory Devices:
Promising for non-volatile memory and logic devices based on ferroelectric switching.
2D Material Studies:
Suitable for exfoliation and integration into van der Waals heterostructures.
Flexible Electronics:
High potential for applications in flexible and wearable electronic devices.
Sensors:
Excellent sensitivity for gas, chemical, and environmental sensing.

Additional information

CAS Number

1205₆-0₇-4