Description
InSiTe₃ Crystals (Indium Silicon Telluride)
InSiTe₃ is a layered chalcogenide material with a van der Waals structure, known for its unique electronic, optical, and thermoelectric properties. Its tunable bandgap, high thermoelectric performance, and excellent stability make it a promising material for optoelectronics, energy storage, and advanced 2D material research. Our InSiTe₃ crystals are synthesized using the Chemical Vapor Transport (CVT) method to ensure high purity, exceptional crystallinity, and reliable performance for cutting-edge research.
Sample Size Options:
Crystals larger than 10 mm²
Crystals larger than 25 mm²
Material Properties:
Layered Van der Waals Structure: Facilitates exfoliation into thin layers for 2D material research.
Semiconducting Behavior: Features a tunable bandgap suitable for optoelectronic applications.
Thermoelectric Properties: High thermoelectric efficiency for energy applications.
Optical Absorption: Strong absorption in the visible-to-near-infrared range.
Crystal Structure:
Type: Trigonal layered structure
Features: Cleavable layers ideal for thin-film fabrication and nanoscale research.
Degree of Exfoliation:
Ease of Use: Readily exfoliates into monolayers or few-layer sheets for advanced research applications.
Other Characteristics:
Optoelectronic Potential: High photoluminescence and quantum efficiency for photonic devices.
Energy Applications: Promising for thermoelectric and photovoltaic devices.
Anisotropic Properties: Exhibits direction-dependent optical and electronic behavior.
Applications:
Optoelectronics:
Suitable for photodetectors, light-emitting devices, and solar cells.
Energy Applications:
Ideal for thermoelectric devices, photocatalysis, and energy storage systems.
2D Material Research:
Perfect for exfoliation into thin layers and integration with van der Waals heterostructures.
Quantum Materials Research:
Enables exploration of low-dimensional semiconducting and optoelectronic properties.
Sensors:
High sensitivity to environmental stimuli, making it suitable for advanced sensing applications.
Additional information
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