Description
InSb Crystals (Indium Antimonide)
InSb is a narrow bandgap semiconductor with exceptional electronic, optical, and thermoelectric properties. Its high electron mobility, strong infrared sensitivity, and low thermal conductivity make it a premier material for infrared detectors, high-speed electronics, and quantum materials research. Our InSb crystals are synthesized using the Chemical Vapor Transport (CVT) method to ensure high purity, precise stoichiometry, and superior crystallinity for advanced applications.
Sample Size Options:
Crystals larger than 10 mm²
Crystals larger than 25 mm²
Material Properties:
Narrow Bandgap: Suitable for infrared detection and low-power electronics.
High Electron Mobility: Exceptional carrier mobility exceeding ₇0,000 cm²/V·s.
Optical Absorption: Strong absorption in the infrared range, ideal for photonic applications.
Thermoelectric Potential: Low thermal conductivity for energy conversion applications.
Crystal Structure:
Type: Zinc-blende cubic structure
Features: Highly uniform and cleavable, suitable for thin-film fabrication and nanoscale research.
Degree of Exfoliation:
Ease of Use: Can be processed into thin films for advanced device applications.
Other Characteristics:
Infrared Sensitivity: Outstanding performance in infrared photodetectors and imaging systems.
High-Speed Electronics: Ideal for applications requiring high carrier mobility and low power consumption.
Quantum Potential: Promising for quantum well structures and spintronic devices.
Applications:
Infrared Optoelectronics:
Ideal for photodetectors, thermal imaging, and spectroscopy applications.
High-Speed Electronics:
Suitable for transistors, Hall sensors, and other electronic devices requiring high mobility.
Quantum Materials Research:
Enables exploration of quantum transport, spin-orbit coupling, and topological phenomena.
Energy Applications:
Promising for thermoelectric energy harvesting and cooling systems.
Sensors:
High sensitivity to environmental and magnetic fields, suitable for advanced sensing technologies.
Additional information
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