Description
InGaS₃ Crystals (Indium Gallium Trisulfide)
InGaS₃ is a ternary layered chalcogenide material with a van der Waals structure, known for its unique semiconducting properties and strong optical absorption. This material offers exceptional tunability in its electronic and optical behavior, making it ideal for optoelectronics, energy applications, and advanced 2D material studies.
Sample Size Options:
Crystals larger than 10 mm²
Material Properties:
Layered Structure: Facilitates exfoliation into thin layers for 2D material studies.
Semiconducting Properties: Exhibits a tunable bandgap suitable for optoelectronic applications.
Strong Optical Absorption: Efficient in the visible and near-infrared ranges.
Thermal Stability: Maintains performance under high-temperature conditions.
Crystal Structure:
Type: Layered orthorhombic structure
Features: Cleavable layers ideal for nanoscale applications and heterostructures.
Degree of Exfoliation:
Ease of Use: Easily exfoliated into monolayers or few-layer sheets for advanced applications.
Other Characteristics:
Tunable Bandgap: Suitable for a range of optoelectronic applications.
Photovoltaic Potential: Promising for solar energy conversion due to its optical properties.
Environmental Stability: Stable under inert storage and controlled environments.
Applications:
Optoelectronics:
Ideal for photodetectors, light-emitting devices, and other visible-to-infrared devices.
Energy Applications:
Suitable for photocatalysis and solar cells due to its strong optical absorption and bandgap.
2D Material Studies:
Excellent for exploring exfoliated layers and van der Waals heterostructures.
Quantum Materials Research:
Enables studies of low-dimensional electronic and optical phenomena.
Sensors:
High sensitivity to light and chemical stimuli, making it suitable for advanced sensing devices.
Additional information
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