Description
InBiSe₃ Crystals (Indium Bismuth Triselenide)
InBiSe₃ is a layered ternary chalcogenide material with a van der Waals structure, exhibiting unique electronic, optical, and thermal properties. With a tunable bandgap and strong anisotropic behavior, InBiSe₃ is a promising candidate for applications in optoelectronics, energy storage, and advanced 2D material research.
Sample Size Options:
Crystals larger than 10 mm²
Crystals larger than 25 mm²
Crystals larger than 100 mm²
Material Properties:
Layered Van der Waals Structure: Enables exfoliation into thin layers for 2D research.
Tunable Bandgap: Suitable for visible and infrared optoelectronic applications.
Anisotropic Properties: Strong direction-dependent electronic and optical characteristics.
Thermal and Chemical Stability: Maintains performance under controlled conditions.
Crystal Structure:
Type: Layered rhombohedral structure
Features: Cleavable layers ideal for nanoscale applications and heterostructures.
Degree of Exfoliation:
Ease of Use: Easily exfoliates into monolayers or few-layer sheets for advanced applications.
Other Characteristics:
Optoelectronic Properties: High optical absorption and quantum efficiency for photonic devices.
Semiconducting Behavior: Promising for nanoscale electronic and optoelectronic research.
Environmental Stability: Stable under inert storage and controlled environments.
Applications:
Optoelectronics:
Ideal for photodetectors, infrared light sensors, and light-emitting devices.
Energy Applications:
Suitable for photocatalysis and energy storage devices due to its strong optical absorption.
2D Material Studies:
Excellent for exploring exfoliated layers and van der Waals heterostructures.
Quantum Materials Research:
Enables studies of low-dimensional electronic and optical phenomena.
Sensors:
High sensitivity to environmental stimuli, making it suitable for advanced sensing applications.
Additional information
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