Description
In₂GaBi₂S₆ Crystals (Indium Gallium Bismuth Sulfide)
In₂GaBi₂S₆ is a layered chalcogenide material with a van der Waals structure, combining unique semiconducting and optoelectronic properties. Its strong light absorption, tunable bandgap, and excellent stability make it a promising material for applications in optoelectronics, energy conversion, and advanced 2D material studies. Our In₂GaBi₂S₆ crystals are synthesized using the Chemical Vapor Transport (CVT) method to ensure high purity, exceptional crystallinity, and reliable performance for cutting-edge research.
Sample Size Options:
Crystals larger than 10 mm²
Crystals larger than 25 mm²
Material Properties:
Layered Van der Waals Structure: Facilitates exfoliation into thin layers for nanoscale research.
Semiconducting Behavior: Features a tunable bandgap, making it suitable for optoelectronic applications.
High Optical Absorption: Strong absorption in the visible-to-near-infrared range.
Environmental Stability: Stable under controlled storage conditions.
Crystal Structure:
Type: Layered monoclinic structure
Features: Cleavable layers ideal for thin-film fabrication and 2D material studies.
Degree of Exfoliation:
Ease of Use: Readily exfoliates into monolayers or few-layer sheets for advanced research applications.
Other Characteristics:
Optoelectronic Potential: High quantum efficiency makes it suitable for photonic and photovoltaic devices.
Energy Applications: Promising for thermoelectric and photocatalytic devices.
Anisotropic Properties: Exhibits direction-dependent optical and electronic behavior.
Applications:
Optoelectronics:
Suitable for photodetectors, light-emitting devices, and solar cells.
2D Material Research:
Ideal for exfoliation into thin layers and integration into van der Waals heterostructures.
Energy Applications:
Promising for thermoelectric and photocatalytic devices.
Quantum Materials Research:
Enables exploration of low-dimensional semiconducting and optoelectronic properties.
Sensors:
High sensitivity to environmental changes makes it suitable for sensing applications.
Additional information
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