Description
HfS₃ Crystals (Hafnium Trisulfide)
HfS₃ is a layered transition metal trichalcogenide (TMT) with a quasi-one-dimensional (1D) structure. It exhibits unique anisotropic electronic and optical properties, making it a promising material for optoelectronics, 2D material studies, and energy storage applications. Our HfS₃ crystals are synthesized using the Chemical Vapor Transport (CVT) method, ensuring high purity, precise stoichiometry, and exceptional crystallinity for advanced research.
Sample Size Options:
Crystals larger than 10 mm²
Crystals larger than 25 mm²
Material Properties:
Quasi-1D Layered Structure: Facilitates the formation of nanoribbons and thin films.
Anisotropic Optical and Electronic Properties: Exhibits direction-dependent behaviors for advanced device integration.
Semiconducting Behavior: Features a moderate bandgap suitable for optoelectronic applications.
High Environmental Stability: Stable under inert conditions for long-term research and application.
Crystal Structure:
Type: Monoclinic layered structure with chain-like layers
Features: Easily cleavable for 2D studies and thin-film fabrication.
Degree of Exfoliation:
Ease of Use: Readily exfoliates into thin layers or nanoribbons for advanced material studies.
Other Characteristics:
Optoelectronic Applications: High absorption and photoconductivity for photonic devices.
Energy Storage Potential: Promising for use in batteries, supercapacitors, and catalysis.
Anisotropic Transport: Suitable for exploring direction-dependent electronic transport phenomena.
Applications:
Optoelectronics:
Ideal for photodetectors, light sensors, and other optoelectronic devices.
2D Material Studies:
Suitable for exfoliation into nanoribbons and thin films for van der Waals heterostructures.
Energy Applications:
Promising for use in hydrogen evolution reactions (HER) and energy storage systems.
Quantum Materials Research:
Enables exploration of low-dimensional and anisotropic quantum phenomena.
Sensors:
High sensitivity to light and environmental changes, ideal for advanced sensing technologies.
Additional information
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