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HfS₂ Crystals

SKU HfS₂-1-1 Category

Additional information

CAS Number

18855-94-2

£396.00£1,300.00

Description

HfS₂ Crystals (Hafnium Disulfide)

HfS₂ is a layered transition metal dichalcogenide (TMD) with a van der Waals structure, known for its outstanding electronic, optical, and catalytic properties. As an indirect bandgap semiconductor, it exhibits excellent carrier mobility, strong optical absorption, and environmental stability, making it a promising material for nanoelectronics, optoelectronics, and energy storage applications. Our HfS₂ crystals are synthesized using the Chemical Vapor Transport (CVT) method, ensuring high purity, precise stoichiometry, and superior crystallinity.

Sample Size Options:
Crystals larger than 10 mm²
Crystals larger than 25 mm²
Crystals larger than 100 mm²

Material Properties:
Layered Van der Waals Structure: Facilitates easy exfoliation into monolayers or few-layer sheets for 2D materials research.
Indirect Bandgap Semiconductor: Bandgap of ~1.1 eV in bulk, tunable in few-layer forms, suitable for optoelectronic applications.
High Carrier Mobility: Suitable for field-effect transistors (FETs) and high-speed electronic devices.
Strong Optical Absorption: Ideal for photodetectors and solar energy applications.
Thermal and Chemical Stability: Excellent stability under ambient conditions, ensuring long-term device performance.

Crystal Structure:
Type: Hexagonal (2H phase) layered structure
Features: Uniform, defect-free surfaces ideal for thin-film fabrication, nanoscale device integration, and heterostructure assembly.

Degree of Exfoliation:
Ease of Use: Easily exfoliated into monolayers or few-layer nanosheets for advanced materials research and device applications.

Other Characteristics:
High Dielectric Constant: Suitable for applications in next-generation high-κ dielectrics.
Anisotropic Transport Properties: Direction-dependent electronic and thermal properties for advanced device architectures.
Energy Band Engineering: Tunable electronic properties through doping, strain, or layer thickness control.

Applications:
Nanoelectronics:
High-performance material for transistors, integrated circuits, and flexible electronic devices.
Optoelectronics:
Ideal for photodetectors, light-emitting diodes (LEDs), and photovoltaic cells.
Energy Storage:
Potential for applications in lithium-ion batteries, supercapacitors, and hydrogen evolution reactions (HER).
2D Material Studies:
Perfect for exfoliation into monolayers and integration into van der Waals heterostructures.
Sensors:
High sensitivity for gas detection, biosensing, and chemical sensing applications.

Synthesis Method:
Chemical Vapor Transport (CVT): Ensures high-quality crystals with excellent purity, uniform thickness, and superior structural integrity.

Additional information

CAS Number

18855-94-2