Description
Hexagonal Boron Nitride (h-BN) Transferred onto SiO₂ Substrate (1 cm × 1 cm)
CAS Number: 10043-11-5
Preparation Method:
Hexagonal boron nitride (h-BN) films are first grown on copper foils via a high-temperature Chemical Vapor Deposition (CVD) process. These high-quality h-BN films are subsequently transferred onto SiO₂/Si substrates (300 nm SiO₂ layer) using a PMMA-assisted wet chemical transfer method to ensure minimal defects and high uniformity.
Morphology Options:
Monolayer
Few Layers (<10 layers, ~5 nm) Multilayer (>5 nm)
All options are available at the same price. For specific requirements, please contact us directly.
Substrate Options:
h-BN films are transferred onto SiO₂/Si substrates, providing a robust and insulating base for advanced applications. Custom transfer to other substrate materials is available upon request—please visit our Custom Products page or contact us for assistance.
Fundamental Properties:
Hexagonal boron nitride (h-BN) is a two-dimensional material with remarkable stability and insulating properties. Transferred h-BN films retain their excellent dielectric and mechanical properties, combined with the thermal stability of the SiO₂/Si substrate.
Key properties include:
Chemical Stability: High resistance to oxidation and chemical degradation.
Thermal Stability: Can withstand high temperatures, making it suitable for extreme environments.
Mechanical Strength: Exceptional strength and flexibility, enabling integration into robust devices.
Wide Bandgap: Excellent dielectric properties (bandgap ~5.9 eV) for use as an insulating layer.
Applications:
Electronics: Ideal as a dielectric layer or insulating substrate for graphene and other 2D materials in advanced electronic devices.
Optoelectronics: Suitable for light-emitting devices and UV detectors.
Thermal Management: Perfect for high-performance thermal insulation and heat dissipation.
Sensors: A chemically stable insulating material for gas and chemical sensors.
Energy Applications: Used as a protective or insulating layer in energy storage and conversion devices.