Description
Graphene FET (Standard Device)
Device Structure:
Conductive Si Substrate / 300 nm SiO₂ Layer / Graphene Channel / Cr+Au Electrodes
Device Description & Features:
High-Performance 2D Material: Graphene is a single-layer honeycomb lattice of carbon atoms, offering ultrahigh carrier mobility, linear band dispersion, and tunable electronic properties.
Back-Gated FET Configuration: The SiO₂/Si back-gate structure provides effective electrostatic control, enabling high carrier mobility and low-power operation.
Metal Contact Engineering: The Cr+Au electrodes ensure low-resistance contacts, optimizing carrier injection and transport.
Solution-Processed or CVD-Grown Graphene:
CVD-Grown Monolayer Graphene: Ensures large-area uniformity for scalable device fabrication.
Mechanically Exfoliated Graphene: Preserves intrinsic electronic properties with minimal defects, optimizing carrier transport.
Applications:
High-Performance Field-Effect Transistors (FETs):
Graphene FETs exhibit ballistic transport, high-speed switching, and low noise, enabling next-generation nanoelectronics.
Flexible and Transparent Electronics:
Ideal for wearable devices, transparent touchscreens, and flexible transistors due to graphene’s mechanical flexibility and optical transparency.
Optoelectronic & Photodetector Devices:
Graphene’s broadband absorption and high carrier mobility make it suitable for ultrafast photodetectors and THz applications.
Quantum Transport & Spintronics:
Graphene’s Dirac-like band structure and long spin coherence length make it promising for quantum computing and spintronic applications.
Additional information
| CAS Number | N/A |
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