Description
GeSb₄Te₇ Crystals (Germanium Antimony Telluride)
GeSb₄Te₇ is a layered chalcogenide material with a van der Waals structure, well-known for its phase-change properties and thermoelectric performance. It exhibits high electrical conductivity, strong optical absorption, and phase stability, making it a promising material for non-volatile memory, energy conversion, and optoelectronics applications. Our GeSb₄Te₇ crystals are synthesized using the Chemical Vapor Transport (CVT) method, ensuring high purity, precise stoichiometry, and exceptional crystallinity.
Sample Size Options:
Crystals larger than 10 mm²
Crystals larger than 25 mm²
Material Properties:
Phase-Change Behavior: Exhibits reversible switching between amorphous and crystalline phases for memory applications.
Thermoelectric Performance: High Seebeck coefficient and low thermal conductivity.
Optical Properties: Strong absorption in the visible and infrared ranges, ideal for photonic devices.
Layered Van der Waals Structure: Enables exfoliation into thin films for nanoscale research.
Crystal Structure:
Type: Rhombohedral layered structure
Features: Cleavable layers ideal for thin-film fabrication and device integration.
Degree of Exfoliation:
Ease of Use: Readily exfoliates into monolayers or few-layer sheets for advanced research applications.
Other Characteristics:
Energy Applications: Suitable for thermoelectric devices and energy storage systems.
Non-Volatile Memory Potential: Promising for phase-change memory (PCM) technology.
Optoelectronic Applications: High optical performance for photodetectors and light-emitting devices.
Applications:
Non-Volatile Memory:
Ideal for phase-change memory and reconfigurable computing.
Thermoelectric Devices:
Promising for energy conversion and thermal management systems.
Optoelectronics:
Suitable for photodetectors, infrared sensors, and other photonic technologies.
2D Material Studies:
Perfect for exfoliation into thin layers and integration with van der Waals heterostructures.
Quantum Materials Research:
Enables exploration of low-dimensional and thermoelectric phenomena.
Additional information
| CAS Number | N/A |
|---|