GeS Crystals

Description

GeS Crystals (Germanium Sulfide)

GeS is a layered semiconductor material belonging to the family of group-IV monochalcogenides. It exhibits strong anisotropic optical and electronic properties due to its unique orthorhombic crystal structure. With a narrow bandgap and excellent environmental stability, GeS is a promising material for optoelectronics, photovoltaics, and 2D material research.

Sample Size Options:
Crystals larger than 10 mm²
Crystals larger than 25 mm²

Material Properties:
Layered Structure: Ideal for exfoliation into thin layers for 2D applications.
Anisotropic Properties: Exhibits strong direction-dependent optical and electronic behavior.
Narrow Bandgap: (~1.6 eV), suitable for visible to near-infrared applications.
Thermal and Chemical Stability: Maintains performance under controlled conditions.

Crystal Structure:
Type: Orthorhombic layered structure
Features: Easily cleavable into thin sheets, suitable for nanoscale studies.

Degree of Exfoliation:
Ease of Use: Readily exfoliates into monolayers or few-layer sheets for advanced research.

Other Characteristics:
Optoelectronic Properties: High quantum efficiency and strong light absorption for photonic devices.
Photovoltaic Potential: Suitable for solar energy conversion applications.
Environmental Stability: Stable under inert conditions, ensuring long-term usability.

Applications:
Optoelectronics:
Ideal for photodetectors, LEDs, and light-sensitive devices.
Photovoltaics:
Promising for solar cells due to its narrow bandgap and optical properties.
2D Material Research:
Perfect for exfoliation into thin layers for van der Waals heterostructures.
Sensors:
High sensitivity to light and chemical stimuli, making it ideal for advanced sensing applications.
Quantum Materials Research:
Enables exploration of low-dimensional electronic and optical phenomena.

References:
1, Madatov, R., A. Alekperov, and O. Hasanov. “Effect of Nd Impurity on Photoconductivity and Optical Absorption Spectra of GeS Single Crystal.” Journal of Applied Spectroscopy 84.1 (2017).
2,Madatov, R., A. Alekperov, and O. Hasanov. “Effect of Nd Impurity on Photoconductivity and Optical Absorption Spectra of GeS Single Crystal.” Journal of Applied Spectroscopy 84.1 (2017).
3,Zhang, Shengli, et al. “Two-dimensional GeS with tunable electronic properties via external electric field and strain.” Nanotechnology 27.27 (2016): 274001.