Description
GeBi₂Te₄ Crystals (Germanium Bismuth Telluride)
GeBi₂Te₄ is a layered topological insulator with a van der Waals structure, known for its exceptional electronic, optical, and thermoelectric properties. Its robust surface states, high thermoelectric efficiency, and anisotropic behavior make it a promising material for quantum materials research, energy harvesting, and spintronic applications. Our GeBi₂Te₄ crystals are synthesized using the Chemical Vapor Transport (CVT) method, ensuring high purity, precise stoichiometry, and superior crystallinity for advanced research and applications.
Sample Size Options:
Crystals larger than 10 mm²
Crystals larger than 25 mm²
Crystals larger than 100 mm²
Material Properties:
Layered Van der Waals Structure: Facilitates exfoliation into thin layers for 2D material research.
Topological Insulator Behavior: Exhibits robust surface states protected by time-reversal symmetry.
Thermoelectric Efficiency: High Seebeck coefficient and low thermal conductivity for energy conversion.
Optical Properties: Strong absorption in the visible and infrared ranges.
Crystal Structure:
Type: Rhombohedral layered structure
Features: Cleavable layers ideal for thin-film fabrication and nanoscale device research.
Degree of Exfoliation:
Ease of Use: Readily exfoliates into monolayers or few-layer sheets for advanced research applications.
Other Characteristics:
Quantum Properties: Promising for studying topological surface states and quantum transport phenomena.
Thermoelectric Applications: Ideal for energy harvesting and thermal management systems.
Spintronics Applications: Suitable for exploring spin-momentum locking and spin-based devices.
Applications:
Quantum Materials Research:
Enables studies of topological insulators and low-dimensional electronic properties.
Thermoelectric Devices:
Suitable for power generation and thermal management applications.
Spintronics:
Promising for spin-based devices and investigating spin-orbit coupling.
2D Material Studies:
Perfect for exfoliation into thin layers and integration with van der Waals heterostructures.
Optoelectronics:
Suitable for photodetectors, sensors, and other optoelectronic devices.