GaTe Crystals

Description

GaTe Crystals (Gallium Telluride)

GaTe is a layered semiconductor material with a van der Waals structure, known for its anisotropic optical and electronic properties. It exhibits a direct bandgap, strong photoluminescence, and excellent environmental stability, making it a versatile material for optoelectronic devices, quantum materials research, and 2D material studies.

Sample Size Options:
Crystals larger than 10 mm²
Crystals larger than 25 mm²
Crystals larger than 100 mm²

Material Properties:
Layered Van der Waals Structure: Facilitates exfoliation into thin layers for 2D material studies.
Direct Bandgap: Ideal for optoelectronic and photonic applications.
Anisotropic Optical Properties: Exhibits unique direction-dependent light absorption and emission.
Environmental Stability: Maintains structural and electronic properties under ambient conditions.

Crystal Structure:
Type: Layered monoclinic structure
Features: Easily cleavable layers for thin-film fabrication and nanoscale research.

Degree of Exfoliation:
Ease of Use: Readily exfoliates into monolayers or few-layer sheets for advanced research and device integration.

Other Characteristics:
Optoelectronic Performance: High photoluminescence and optical absorption for cutting-edge devices.
Quantum Research Potential: Enables exploration of anisotropic electronic transport and quantum effects.
Energy Applications: Suitable for thermoelectric systems and catalytic processes.

Applications:
Optoelectronics:
Ideal for photodetectors, light-emitting diodes, and photovoltaic devices.
Quantum Materials Research:
Suitable for studying transport phenomena and anisotropic electronic properties.
Energy Applications:
Promising for thermoelectric devices and energy conversion systems.
2D Material Studies:
Perfect for exfoliation into monolayers and integration into van der Waals heterostructures.
Sensors:
High sensitivity for detecting environmental and chemical stimuli.