Description
Bismuth Telluride (Bi₂Te₃)
CAS Number: 1304-82-1
Substrate Size: 1 cm × 1 cm
Preparation Method: Chemical Vapor Deposition (CVD)
Substrate Options:
Bi₂Te₃ films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request—please visit our Custom Products page or contact us for assistance.
Fundamental Properties:
Bismuth telluride (Bi₂Te₃) is a layered material with a rhombohedral crystal structure. It is one of the most efficient thermoelectric materials, with high thermoelectric figure-of-merit (ZT) values at room temperature. Bi₂Te₃ also exhibits topological insulating behavior, with metallic surface states protected by time-reversal symmetry and an insulating bulk, making it a promising material for spintronics and quantum technologies.
Bi₂Te₃ has a narrow bandgap of approximately 0.15 eV, excellent thermal stability, and unique electronic properties that enable applications in thermoelectrics, sensors, and advanced electronics.
Applications:
Thermoelectric Devices: Bi₂Te₃ is widely used in thermoelectric generators and coolers due to its high ZT value at room temperature.
Topological Insulators: Its surface states make it a key material for quantum computing and spintronic applications.
Electronics: Bi₂Te₃ can be utilized as a functional layer in electronic devices due to its stable electronic properties.
Sensors: Bi₂Te₃’s unique properties allow for the development of sensitive chemical and gas sensors.
Energy Harvesting: Its thermoelectric properties enable the conversion of waste heat into electrical energy.
Additional information
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