Description
Bismuth Selenide (Bi₂Se₃)
CAS Number: 12068-69-8
Substrate Size: 1 cm × 1 cm
Preparation Method: Chemical Vapor Deposition (CVD)
Substrate Options:
Bi₂Se₃ films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request—please visit our Custom Products page or contact us for assistance.
Fundamental Properties:
Bismuth selenide (Bi₂Se₃) is a layered topological insulator with a rhombohedral crystal structure. It exhibits insulating behavior in the bulk but hosts conducting surface states protected by time-reversal symmetry. These surface states have a linear Dirac-like energy dispersion, making Bi₂Se₃ a unique material for quantum and spintronic applications.
Bi₂Se₃ has a narrow bandgap of approximately 0.3 eV and displays excellent thermoelectric properties. Its high chemical stability and low thermal conductivity make it a promising material for thermoelectric devices and advanced quantum technologies.
Applications:
Topological Insulators: Bi₂Se₃ is widely studied for its unique surface states, which are essential for spintronics and quantum computing applications.
Thermoelectric Devices: Its high thermoelectric efficiency enables its use in power generation and refrigeration technologies.
Electronics: Bi₂Se₃ can serve as a substrate or functional layer in electronic devices due to its stable electronic properties.
Sensors: Bi₂Se₃’s surface states and electronic properties allow for the development of highly sensitive chemical and gas sensors.
Photonics: Its optical properties enable applications in nonlinear optics and photodetection.
Additional information
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