Description
Bi₂O₂Se Crystals (Bismuth Oxyselenide)
Bi₂O₂Se is a layered semiconductor material with a unique structure combining a bismuth oxide layer and a selenium layer. It exhibits excellent electron mobility, strong anisotropic properties, and high thermal stability, making it suitable for applications in optoelectronics, thermoelectrics, and 2D material research.
Sample Size Options:
Crystals larger than 10 mm²
Crystals larger than 25 mm²
Crystals larger than 100 mm²
Material Properties:
Layered Structure: Facilitates exfoliation into monolayers or few-layer sheets for advanced research.
High Electron Mobility: Exhibits mobility exceeding 450 cm²/V·s at room temperature.
Wide Bandgap (~0.8 eV): Suitable for electronic and optoelectronic applications.
Environmental Stability: Maintains properties under ambient conditions.
Crystal Structure:
Type: Layered orthorhombic structure
Features: Combines oxide and chalcogenide layers for enhanced functionality.
Degree of Exfoliation:
Ease of Use: Readily exfoliates into thin layers for 2D material studies and advanced device applications.
Other Characteristics:
Thermoelectric Applications: High potential for waste heat recovery and energy harvesting.
Optoelectronic Potential: Ideal for photodetectors, light-emitting devices, and photonic applications.
Quantum Research Opportunities: Promising for studying anisotropic transport and electronic properties.
Applications:
Optoelectronics:
Ideal for photodetectors, infrared sensors, and photovoltaic devices.
Quantum Materials Research:
Enables exploration of anisotropic electronic transport and quantum effects.
Thermoelectric Devices:
Suitable for energy harvesting and waste heat recovery systems.
2D Material Studies:
Perfect for exfoliation into monolayers and integration into van der Waals heterostructures.
Energy Applications:
Promising for energy conversion and catalytic processes.
Additional information
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