Description
Antimony Telluride (Sb₂Te₃)
CAS Number: 1327-50-0
Substrate Size: 1 cm × 1 cm
Preparation Method: Chemical Vapor Deposition (CVD)
Morphology Options:
Thickness range: Minimum 5 nm, maximum 50 nm. For specific thickness requirements, please contact us directly.
Substrate Options:
Sb₂Te₃ films are directly grown on sapphire substrates. Custom transfer to other substrates is available upon request—please visit our Custom Products page or contact us for assistance.
Fundamental Properties:
Antimony telluride (Sb₂Te₃) is a layered material with a rhombohedral crystal structure and is well known for its outstanding thermoelectric and topological insulating properties. Sb₂Te₃ exhibits metallic surface states due to its topological insulating nature, while the bulk remains semiconducting with a narrow bandgap of approximately 0.3 eV.
As a thermoelectric material, Sb₂Te₃ achieves high efficiency in converting heat into electricity and vice versa, making it a key material for thermoelectric devices. Its high carrier mobility and surface state conductivity also enable advanced applications in spintronics and quantum computing.
Applications:
Thermoelectric Devices: Sb₂Te₃ is widely used in thermoelectric coolers and power generation modules due to its high thermoelectric performance near room temperature.
Topological Insulators: Sb₂Te₃’s topologically protected surface states make it an important material for quantum computing and spintronic devices.
Sensors: Sb₂Te₃-based devices offer high sensitivity for detecting gases and environmental changes.
Electronics: Its stable electronic properties make it a suitable functional layer in advanced electronic applications.
Energy Harvesting: Sb₂Te₃ is utilized in converting waste heat into usable electrical energy.
Additional information
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