Description
AgInP₂S₆ Crystals (Silver Indium Thiophosphate)
AgInP₂S₆ is a layered chalcogenide material with a van der Waals structure, known for its unique ferroelectric, semiconducting, and optical properties. The material exhibits tunable bandgaps and strong light absorption, making it an excellent candidate for optoelectronics, energy applications, and advanced 2D material studies.
Sample Size Options:
Crystals larger than 10 mm²
Crystals larger than 25 mm²
Crystals larger than 100 mm²
Material Properties:
Layered Van der Waals Structure: Allows for exfoliation into thin layers for 2D studies.
Ferroelectric Properties: Exhibits spontaneous polarization and high dielectric constants.
Semiconducting Behavior: Tunable bandgap, suitable for optoelectronic devices.
Optical Absorption: Strong absorption in the visible-to-near-infrared range.
Crystal Structure:
Type: Hexagonal layered structure
Features: Cleavable layers, suitable for nanoscale studies and heterostructure fabrication.
Degree of Exfoliation:
Ease of Use: Readily exfoliated into monolayers or few-layer sheets for advanced research applications.
Other Characteristics:
Optoelectronic Potential: Excellent for photodetectors and light-emitting devices due to its strong absorption.
Ferroelectricity: Stable ferroelectric properties ideal for memory and logic devices.
Energy Applications: Promising for energy storage and conversion applications.
Environmental Stability: Stable under inert conditions, sensitive to prolonged air exposure.
Applications:
Optoelectronics:
Ideal for solar cells, photodetectors, and LEDs due to its tunable optical properties.
Ferroelectric Devices:
Suitable for non-volatile memory and logic applications.
2D Material Studies:
Excellent for studying exfoliated layers and integrating with van der Waals heterostructures.
Energy Applications:
Promising material for batteries, supercapacitors, and energy conversion devices.
Quantum Materials Research:
Enables investigations into low-dimensional ferroelectric and semiconducting behavior.
Additional information
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