Description
AgInP₂Se₆ Crystals (Silver Indium Selenophosphate)
AgInP₂Se₆ is a layered chalcogenide material with a van der Waals structure, known for its unique ferroelectric, semiconducting, and optical properties. With a tunable bandgap and strong optical absorption, AgInP₂Se₆ is a promising candidate for applications in optoelectronics, energy storage, and advanced 2D material research.
Sample Size Options:
Crystals larger than 10 mm²
Crystals larger than 25 mm²
Crystals larger than 100 mm²
Material Properties:
Layered Van der Waals Structure: Enables exfoliation into thin layers for 2D studies.
Ferroelectric Properties: Exhibits spontaneous polarization and high dielectric constants.
Semiconducting Behavior: Features a tunable bandgap for optoelectronic applications.
Optical Absorption: Strong absorption in the visible-to-infrared range.
Crystal Structure:
Type: Hexagonal layered structure
Features: Cleavable layers ideal for nanoscale studies and heterostructure assembly.
Degree of Exfoliation:
Ease of Use: Easily exfoliates into monolayers or few-layer sheets for advanced research and device fabrication.
Other Characteristics:
Optoelectronic Potential: Suitable for photodetectors, solar cells, and LEDs due to its strong light absorption.
Ferroelectricity: Stable ferroelectric properties make it ideal for memory and logic devices.
Energy Applications: High potential for energy storage and conversion technologies.
Environmental Stability: Stable under inert conditions, sensitive to prolonged exposure to air and moisture.
Applications:
Optoelectronics:
Ideal for photodetectors, light-emitting devices, and solar cells.
Ferroelectric Devices:
Suitable for non-volatile memory, capacitors, and logic circuits.
2D Material Studies:
Perfect for exfoliation into thin layers and integration with van der Waals heterostructures.
Energy Applications:
Promising for batteries, supercapacitors, and photovoltaic devices.
Quantum Materials Research:
Enables studies of low-dimensional ferroelectric and semiconducting properties.
Additional information
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