InBiSe₃ Crystals

InBiSe₃ Crystals

InBiSe₃ is a layered ternary chalcogenide material with a van der Waals structure, exhibiting unique electronic, optical, and thermal properties. With a variable bandgap and strong anisotropic behavior, InBiSe₃ is a promising candidate for applications in optoelectronics, energy storage, and specialized 2D material research.

Sample Size Options:
Crystals larger than 10 mm²
Crystals larger than 25 mm²
Crystals larger than 100 mm²

Material Properties:
Layered van der Waals Structure: Permits exfoliation into thin layers for 2D research.
Variable Bandgap: Applicable to visible and infrared optoelectronic applications.
Anisotropic Properties: Strong direction-dependent electronic and optical characteristics. Thermal and Chemical behavior: Maintains performance under controlled conditions.

Crystal Structure:
Type: Layered rhombohedral structure
Features: Cleavable layers applicable for nanoscale applications and heterostructures.

Degree of Exfoliation:
Ease of Use: Easily exfoliates into monolayers or few-layer sheets for specialized applications.

Other Characteristics:
Optoelectronic Properties: High optical absorption and quantum efficiency for photonic devices.
Semiconducting Behavior: Promising for nanoscale electronic and optoelectronic research.
Environmental behavior: Consistent under inert storage and controlled environments.

Applications:
Optoelectronics:
Applicable for photodetectors, infrared light sensors, and light-emitting devices. Energy

Applications:
Applicable to photocatalysis and energy storage devices due to its strong optical absorption.
2D Material Studies:
High for exploring exfoliated layers and van der Waals heterostructures. Quantum Materials Research:
Permits studies of low-dimensional electronic and optical phenomena. Sensors:
High sensitivity to environmental stimuli, making it applicable to specialized sensing applications.