Molybdenum Ditelluride (MoTe₂)

Molybdenum Ditelluride (MoTe₂)

CAS Number: 12058-20-7

Substrate Size: 1 cm x 1 cm

Preparation Method: Chemical Vapor Deposition (CVD)

Morphology Options:
Few Layers (~5 layers)
Multiple Layers (~10 layers) Phase Options:
2H
1T’

Substrate Options:
MoTe₂ films can be directly grown on SiO₂ or sapphire substrates. Custom transfer to other substrates is available upon request; please visit Custom Products page or contact us for assistance.

Fundamental Properties:
Molybdenum ditelluride (MoTe₂) is a layered transition metal dichalcogenide (TMD) with polymorphic phases, including semiconducting 2H and metallic 1T’ structures. In its monolayer form, 2H-MoTe₂ has a direct bandgap of approximately 1.1 eV, and it is used for optoelectronic applications. The 1T’ phase, on the other hand, exhibits metallic properties and is used in topological applications. MoTe₂ has stability under the stated environmental conditions, tunable phase transitions, and carrier mobility; it is used for electronic, optoelectronic, and sensing applications. Its catalytic activity and structural properties can also support use in energy storage and conversion technologies.

Applications:
Optoelectronics: The direct bandgap of 2H-MoTe₂ supports its use in photodetectors, solar cells, and other light-harvesting devices.
Electronics: MoTe₂ is a channel material for field-effect transistors (FETs) due to its carrier mobility and tunable electronic properties. Energy Applications: MoTe₂ demonstrates catalytic activity for hydrogen evolution reactions (HER) and can be utilized in batteries and supercapacitors.
Sensors: MoTe₂-based sensors are used for gas and chemical detection.
Quantum Technologies: The 1T’ phase of MoTe₂ supports exploration in topological quantum materials and spintronics.