Mechanically Exfoliated Monolayer Graphene FET

Description

Mechanically Exfoliated Monolayer Graphene FET

Device Structure:
Highly Doped Conductive Si Substrate / 300 nm SiO₂ Layer / Monolayer Graphene / Cr+Au Electrodes

Device Specifications:
Graphene Thickness: Monolayer
Electrode Material: Cr+Au
Gate Dielectric: 300 nm SiO₂
For specific device modifications, please contact us.

Device Description & Features:
Ultra-High Carrier Mobility: Graphene exhibits ballistic transport, extremely high carrier mobility (>10,000 cm²/V·s), and a linear band structure, making it an ideal high-speed transistor material.
Back-Gated FET Configuration: The SiO₂/Si back-gate structure provides efficient electrostatic control, enabling low-power operation and high switching speeds.
Mechanically Exfoliated Monolayer Graphene: Preserves intrinsic properties, ensuring low defect density, minimal scattering, and superior electrical performance.
Ohmic Metal Contacts: Cr+Au electrodes provide low-resistance contacts, optimizing charge injection and transport.
Ambipolar Conductivity: Graphene allows for electron and hole conduction, making it suitable for reconfigurable electronic circuits.

Applications:
High-Performance Field-Effect Transistors (FETs):
Graphene FETs demonstrate ultrafast switching, high-frequency operation, and excellent gate tunability for next-generation nanoelectronics.
Flexible and Transparent Electronics:
Graphene’s mechanical flexibility and optical transparency (~97.7%) make it ideal for flexible, stretchable, and transparent electronic devices.
Optoelectronic & THz Applications:
The broadband absorption and ultrafast response of graphene enable photodetectors, optical modulators, and THz applications.
Quantum Transport & Spintronics:
Graphene’s Dirac-like electronic structure allows potential applications in quantum computing, spintronics, and valleytronics.