Description
GaGeTe Crystals (Gallium Germanium Telluride)
GaGeTe is a layered semiconductor with a van der Waals structure, exhibiting unique electronic, optical, and thermoelectric properties. Its anisotropic behavior and excellent cleavage properties make it an ideal material for 2D material research, optoelectronics, and quantum materials studies.
Sample Size Options:
Crystals larger than 10 mm²
Crystals larger than 25 mm²
Material Properties:
Layered Van der Waals Structure: Facilitates exfoliation into thin layers for nanoscale research.
Semiconducting Behavior: Features a tunable bandgap, making it suitable for optoelectronic devices.
Anisotropic Properties: Exhibits strong direction-dependent electronic and optical behavior.
Thermoelectric Performance: Promising for energy conversion applications due to low thermal conductivity and high Seebeck coefficient.
Crystal Structure:
Type: Rhombohedral layered structure
Features: Cleavable into thin sheets for 2D material studies and heterostructure integration.
Degree of Exfoliation:
Ease of Use: Readily exfoliates into monolayers or few-layer sheets for advanced research.
Other Characteristics:
Optoelectronic Potential: Strong light absorption and emission properties, suitable for photonic devices.
Energy Applications: Promising for thermoelectric devices and photocatalysis.
Environmental Stability: Stable under inert conditions, with moderate sensitivity to air and moisture.
Applications:
Optoelectronics:
Suitable for photodetectors, light-emitting devices, and solar cells.
2D Material Research:
Ideal for studying exfoliated thin layers and integrating with van der Waals heterostructures.
Quantum Materials Research:
Enables exploration of low-dimensional electronic and optical properties.
Energy Applications:
Promising for thermoelectric devices, photocatalysis, and energy storage systems.
Sensors:
Suitable for advanced sensing applications due to its anisotropic electronic properties.
References
1. Drasar, C., et al. “Thermoelectric properties and nonstoichiometry of GaGeTe.” Journal of Solid State Chemistry 193 (2012): 42-4₆.
2. Wang, Weike, et al. “Ultrathin GaGeTe p-type transistors.” Applied Physics Letters 111.20 (201₇): 203504.
3. Kucek, Vladimir, et al. “Optical and transport properties of GaGeTe single crystals.” Journal of Crystal Growth 380 (2013): ₇2-₇₇.
Additional information
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